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Samsung mass produces 10-nano level DRAM

All Headlines 09:24 April 05, 2016

By Kang Yoon-seung

SEOUL, April 5 (Yonhap) -- Samsung Electronics Co. said Tuesday it has commenced the mass production of the industry's first 10-nanometer level dynamic random access memory (DRAM) chips, speeding up its dominance in the segment.

The South Korean giant said it is producing 8-gigabit DDR4 chips through 10-nanometer-level technology, a breakthrough which came around two years after Samsung made 4-gigabit DDR3 DRAMs via 20-nanometer production.

A smaller number indicates more efficient production procedures. The company said the technology can beef up productivity by 30 percent compared to the previous 20-nanometer technology.

"Samsung's 10 nanometer-class DRAM will enable the highest level of investment efficiency in IT systems, thereby becoming a new growth engine for the global memory industry," Samsung said in a release.

"In the near future, we will also launch next-generation, 10nm-class mobile DRAM products with high densities to help mobile manufacturers develop even more innovative products that add to the convenience of mobile device users," the company added.

Samsung Electronics also said it plans to start the mass production of 10-nano-level mobile DRAMs this year to bolster its competitiveness in the smartphone segment as well.

colin@yna.co.kr
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